PART |
Description |
Maker |
5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI Advanced Semiconductor, Inc.
|
BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE Schottky Barrier Diode
|
ON Semiconductor
|
1SS286 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Schottky Barrier Diodes for Detection and Mixer
|
HITACHI[Hitachi Semiconductor]
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
SDM40E20L08 SDM40E20LA-7 SDM40E20LS-7-F SDM40E20LC |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE DIODE SCHOTTKY 20V 300MW SOT23 0.4 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
Diodes Incorporated Diodes Inc.
|
BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装,高可靠性的应用(共阳极)(双肖特基势垒二极管(高可靠性应用,TO258金属封装,共阳极连接)) DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接)) Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|